PART |
Description |
Maker |
MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400(x16)的快闪记忆体和4M(x16)的静态RAM
|
Spansion, Inc.
|
M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM 512K X 8 UVPROM, 100 ns, CDIP40 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71 TRIMMER, 15 TURN 20K CONN HEADER 12POS DL PCB 30GOLD 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
M27V160-100K1 |
16 MBIT (2MB X8 OR 1MB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
|
M27C4002-70N1X M27C4002-70N1TR M27C4002-70XJ1X M27 |
4 Mbit (256Kb x16) UV EPROM and OTP EPROM 4兆位56Kb的16)紫外线存储器和OTP存储
|
意法半导 STMicroelectronics N.V.
|
M27C322 6184 |
32 Mbit (2Mb x16) UV EPROM and OTP EPROM From old datasheet system
|
STMicro
|
M27C322 |
32 MBIT (2MB X16) UV EPROM AND OTP EPROM
|
ST Microelectronics
|
LRS1B12 |
64M ( X16) Flash & 64M ( X16) Flash & 32M ( X16) SCRAM & 8M (x16) SRAM
|
Sharp Microelectronics
|
MB84VD22181FM-70PBS MB84VD22191FM-70PBS |
32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM 32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM 32M的(x16)的快闪记忆
|
Spansion Inc. Spansion, Inc.
|
HY62SF16403ALLM-10 HY62SF16403ALLM-10I HY62SF16403 |
x16 SRAM x16|1.8V|85/100|Super Low Power Slow SRAM - 4M x16 | 1.8 | 85/100 |超级低功耗SRAM的速度 4
|
Alpha Industries, Inc.
|
AT27C4096-12DC AT27C4096-12DI AT27C4096-12DM AT27C |
x16 EPROM x16存储
|
Anpec Electronics, Corp.
|
UPD27C4000GW-15 UPD27C4000GW-20 UPD27C4000CZ-15 |
x8/x16 EPROM x8/x16存储
|
Samsung Semiconductor Co., Ltd.
|